Effect of Vacuum Annealing Temperature on the Binary System Ni Si
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Electronic contribution in heat transfer at metal semiconductor
XRD spectra of the Pt x Ge y phases obtained from alloying of a Ge
Nicolas RECKINGER PostDoc Position PhD in Electrical
Effect of Vacuum Annealing Temperature on the Binary System Ni Si
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NiSiTb alloy interlayer properties at NiSi Si junctions for
Temperature dependence of and measured at 3.5 eV for the Pt10 nm
PDF Effect of Vacuum Annealing Temperature on the Binary System
Figure 6 from Ultra low NMOS contact resistivity using a novel
PDF Challenges of nickel silicidation in CMOS technologies
Monolithic and Single Crystalline Aluminum Silicon
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PDF Lanthanum and Lanthanum Silicide Contacts on N Type Silicon
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PDF Schottky barrier lowering with the formation of crystalline
Challenges of nickel silicidation in CMOS technologies ScienceDirect
PDF Titanium germano silicides featuring 10 9 cm 2 contact
PDF Challenges of nickel silicidation in CMOS technologies
Measured I D V D S characteristics of a 120 nm long p type MOSFET
PDF A comprehensive atomistic picture of the as deposited Ni Si
Arsenic Segregated Rare Earth Silicide Junctions Reduction of
Effect of Vacuum Annealing Temperature on the Binary System Ni Si
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PDF Schottky barrier lowering with the formation of crystalline
Monolithic and Single Crystalline Aluminum Silicon
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Variations of the sheet resistance Rs with the temperature of
Figure 2 from Ultra low NMOS contact resistivity using a novel
PDF Effect of Vacuum Annealing Temperature on the Binary System
PDF Electronic contribution in heat transfer at metal
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Arsenic Segregated Rare Earth Silicide Junctions Reduction of
Nicolas Breil Applied Materials LinkedIn
Figure 2 from Ti and NiPt Ti liner silicide contacts for advanced
PDF A comprehensive atomistic picture of the as deposited Ni Si
Titanium based Ohmic contacts in advanced CMOS technology
Arsenic Segregated Rare Earth Silicide Junctions Reduction of
Scheme of the proposed PtSi integration sequence and tilted aerial
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